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Other articles related with "trap-assisted tunneling"：
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37201 |
Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军) |
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Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate |
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Chin. Phys. B
2023 Vol.32 (3): 37201-037201
[Abstract]
(284)
[HTML 1 KB]
[PDF 1115 KB]
(240)
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38501 |
He-Kun Zhang(章合坤), Xuan Tian(田璇), Jun-Peng He(何俊鹏), Zhe Song(宋哲), Qian-Qian Yu(蔚倩倩), Liang Li(李靓), Ming Li(李明), Lian-Cheng Zhao(赵连城), Li-Ming Gao(高立明) |
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Investigation of gate oxide traps effect on NAND flash memory by TCAD simulation |
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Chin. Phys. B
2020 Vol.29 (3): 38501-038501
[Abstract]
(775)
[HTML 1 KB]
[PDF 964 KB]
(187)
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27701 |
Zhi Jiang(蒋 智), Yi-Qi Zhuang(庄奕琪), Cong Li(李 聪), Ping Wang(王 萍), Yu-Qi Liu(刘予琪) |
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Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27701-027701
[Abstract]
(763)
[HTML 1 KB]
[PDF 356 KB]
(486)
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